1 d a t a s h e e t : c p w 4 - 1 2 0 0 - s 0 0 8 r e v . a CPW4-1200-S008B silicon carbide schottky diode chip z -rec ? rectifier features ? 1.2kv schottky rectifer ? zero reverse recovery ? zero forward recovery ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f chip outline v rrm = 1200 v i f = 8 a q c = 37 nc part number die size anode cathode CPW4-1200-S008B 2.00 x 2.00 mm 2 al ni/ag maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v r dc peak blocking voltage 1200 v i f continuous forward current 8 a t j =175?c 1 i frm repetitive peak forward surge current 37.5 25 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse 1 i fsm non-repetitive forward surge current 64 49.5 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse 1 i f,max non-repetitive peak forward current 600 480 a t c =25?c, t p =10 ms, pulse t c =110?c, t p =10 ms, pulse t j , t stg operating junction and storage temperature -55 to +175 ?c t proc maximum processing temperature 325 ?c 10 min. maximum 1. assumes r jc thermal resistance of 1.26?c/w or less subject to change without notice. www.cree.com/power
2 mechanical parameters parameter typ. unit die size 2.00 x 2.00 mm anode pad size 1.72 x 1.72 mm anode pad opening 1.44 x 1.44 mm thickness 377 10% m wafer size 100 mm anode metalization (al) 4 m cathode metalization (ni/ag) 1.8 m frontside passivation polyimide electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.2 1.8 3 v i f = 8 a t j =25c i f = 8 a t j =175c fig. 1 i r reverse current 35 100 250 350 a v r = 1200 v t j =25c v r = 1200 v t j =175c fig. 2 q c total capacitive charge 37 nc v r = 800 v, i f = 8 a d i /d t = 200 a/s t j = 25c fig. 3 c total capacitance 560 37 27 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz fig. 4 cpw4-1200-s008 rev. a
3 typical characteristics 0 2 4 6 8 10 12 14 0 0.5 1 1.5 2 2.5 3 3.5 4 figure 1. forward characteristics figure 2. reverse characteristics 0 100 200 300 400 500 600 700 800 0 500 1000 1500 2000 t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c i f (a) v f (v) v r (v) i r (a) figure 3. total capacitance charge vs. reverse voltage 0 5 10 15 20 25 30 35 40 45 50 0 200 400 600 800 1000 0 100 200 300 400 500 600 0.1 1 10 100 1000 c (pf) v r (v) q c (nc) v r (v) figure 4. capacitance vs. reverse voltage cpw4-1200-s008 rev. a
4 4 chip dimensions symbol dimension mm inch a 2.00 0.079 b 2.00 0.079 c 1.44 0.057 d 1.44 0.057 a b c d cpw4-1200-s008 rev. a, 04-2015 cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree repre - sentative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes ? cree sic schottky diode portfolio: http://www.cree.com/diodes ? cpw4 spice models: http://response.cree.com/request_diode_model ? sic mosfet and diode reference designs: http://response.cree.com/sic_refdesigns related links
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